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The Resource High-throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells, Q. Wang ... [et al.]

High-throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells, Q. Wang ... [et al.]

Label
High-throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells
Title
High-throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells
Statement of responsibility
Q. Wang ... [et al.]
Title variation
High throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells
Contributor
Subject
Language
eng
Summary
We use a high-throughput (combinatorial) hot-wire chemical vapor deposition system to passivate the crystal silicon surface and to grow heterojunction silicon solar cells. We study the effectiveness of crystal surface treatments by atomic H or/and NHx radicals, followed by the growth of thin hydrogenated amorphous silicon (a Si:H) films. Treatment and layer properties such as times, thicknesses, and gas mixtures can be continuously graded, creating a two-dimensional sample with each variable varying in one direction. This results in high-throughput optimization of the processes. Effective carrier lifetime is measured by photoconductive decay to evaluate the effectiveness of the surface passivation by surface treatments. The effective carrier lifetime increases from about 5 [micro]s without passivation to about 24 [micro]s with an optimized surface treatment and thickness a-Si:H on single-sided c-Si. Transmission electron microscopy reveals that a-Si:H, a mixed phase, or epitaxial growth of thin-film Si depending on the surface treatment. Improvement in effective carrier lifetime correlates with an immediate a-Si:H growth on c-Si, rather than a mixed phase and epitaxial Si growth. We have obtained an efficiency of 13.40n a non-textured single-sided heterojunction solar cell on p-type CZ-Si processed with optimized surface treatment
Cataloging source
DOX
Government publication
federal national government publication
Index
no index present
Literary form
non fiction
Nature of contents
dictionaries
Series statement
Conference paper
Series volume
NREL/CP-520-37439
Label
High-throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells, Q. Wang ... [et al.]
Link
Instantiates
Publication
Note
  • Title from title screen (viewed on May 8, 2006)
  • "February 2005."
  • 2005-08-21
Carrier category
volume
Carrier MARC source
rdacarrier
Content category
text
Content type MARC source
rdacontent
Extent
4 p.
Form of item
electronic
Media category
computer
Media MARC source
rdamedia
Other physical details
digital, PDF file.
System control number
  • (OCoLC)ocm68230260
  • (OCoLC)ocn370071287
System details
Mode of access: Internet from the NREL web site. Address as of 5/8/06: http://www.nrel.gov/docs/fy05osti/37439.pdf; current access available via PURL
Label
High-throughput approaches to optimization of crystal silicon surface passivation and heterojunction solar cells, Q. Wang ... [et al.]
Link
Publication
Note
  • Title from title screen (viewed on May 8, 2006)
  • "February 2005."
  • 2005-08-21
Carrier category
volume
Carrier MARC source
rdacarrier
Content category
text
Content type MARC source
rdacontent
Extent
4 p.
Form of item
electronic
Media category
computer
Media MARC source
rdamedia
Other physical details
digital, PDF file.
System control number
  • (OCoLC)ocm68230260
  • (OCoLC)ocn370071287
System details
Mode of access: Internet from the NREL web site. Address as of 5/8/06: http://www.nrel.gov/docs/fy05osti/37439.pdf; current access available via PURL

Library Locations

    • Harold B. Lee Library Brigham Young University, Provo, UT, 84602, US
      40.249156 -111.649242
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