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The Resource Nanoscale transistors : device physics, modeling and simulation, Mark S. Lundstrom, Jing Guo

Nanoscale transistors : device physics, modeling and simulation, Mark S. Lundstrom, Jing Guo

Label
Nanoscale transistors : device physics, modeling and simulation
Title
Nanoscale transistors
Title remainder
device physics, modeling and simulation
Statement of responsibility
Mark S. Lundstrom, Jing Guo
Creator
Contributor
Subject
Language
eng
Cataloging source
UKM
Dewey number
621.381528
Illustrations
illustrations
Index
index present
Literary form
non fiction
Label
Nanoscale transistors : device physics, modeling and simulation, Mark S. Lundstrom, Jing Guo
Instantiates
Publication
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier MARC source
rdacarrier
Content category
text
Content type MARC source
rdacontent
Dimensions
24 cm.
Extent
vi, 217 p.
Isbn
9780387280028
Isbn Type
(hbk.)
Lccn
2005933746
Media category
unmediated
Media MARC source
rdamedia
Other control number
9780387280028
Other physical details
ill.
System control number
(OCoLC)ocn373382305
Label
Nanoscale transistors : device physics, modeling and simulation, Mark S. Lundstrom, Jing Guo
Publication
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier MARC source
rdacarrier
Content category
text
Content type MARC source
rdacontent
Dimensions
24 cm.
Extent
vi, 217 p.
Isbn
9780387280028
Isbn Type
(hbk.)
Lccn
2005933746
Media category
unmediated
Media MARC source
rdamedia
Other control number
9780387280028
Other physical details
ill.
System control number
(OCoLC)ocn373382305

Library Locations

    • Harold B. Lee Library Brigham Young University, Provo, UT, 84602, US
      40.249156 -111.649242
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