Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri and Luca Selmi

Resource Information

The instance Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri and Luca Selmi represents a material embodiment of a distinct intellectual or artistic creation found in Brigham Young University. This resource is a combination of several types including: Instance, Electronic.

Image

http://covers.openlibrary.org/b/isbn/9780511930522-M.jpg?default=false

Label

Nanoscale MOS transistors : semi-classical transport and applications, David Esseni, Pierpaolo Palestri and Luca Selmi

Link

http://site.ebrary.com/lib/byuprovo/Doc?id=10442860

Title remainder

semi-classical transport and applications

Statement of responsibility

David Esseni, Pierpaolo Palestri and Luca Selmi

Instantiates

• Nanoscale MOS transistors : semi-classical transport and applications

Publication

• Cambridge | New York, Cambridge University Press, 2011

Note

• Description based on print version record
• Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential

Bibliography note

Includes bibliographical references and index

Carrier category

online resource

Carrier MARC source

rdacarrier

Content category

text

Content type MARC source

rdacontent

Contents

Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential

Dimensions

unknown

Extent

1 online resource.

Form of item

electronic

Isbn

9780511930522

Isbn Type

(electronic bk.)

Media category

computer

Media MARC source

rdamedia

Record ID

u5211457

Reproduction note

Electronic reproduction.

Specific material designation

remote